Minority carrier isolation barriers for semiconductor devices

Details Minority carrier isolation barriers for semiconductor devices Minority carrier isolation barriers for semiconductor devices

1976-04-29

1977-06-28

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29590, 148171, 357 60, 357 64, B01J 1700

Patent

active

040316076

ABSTRACT:
A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 2967344 (1961-01-01), Mueller
patent: 3266127 (1966-08-01), Harding
patent: 3727116 (1973-04-01), Thomas
patent: 3775196 (1973-11-01), Wakamiya

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