Minority carrier isolation barriers for semiconductor devices

Details Minority carrier isolation barriers for semiconductor devices Minority carrier isolation barriers for semiconductor devices

1974-05-28

1976-10-26

Wojciechowicz, Edward J.

357 60, 357 63, 357 64, 357 89, 357 90, H01L 2704, H01L 2904, H01L 29167, H01L 29207

Patent

active

039887626

ABSTRACT:
A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3461359 (1969-08-01), Raithel et al.
patent: 3513367 (1970-05-01), Wolley
patent: 3727116 (1973-04-01), Thomas et al.
patent: 3775196 (1973-11-01), Wakamiya et al.

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