Minimizing effects of program disturb in a memory device

Details Minimizing effects of program disturb in a memory device Minimizing effects of program disturb in a memory device

2006-02-22

2008-08-05

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180

Reexamination Certificate

active

07408810

ABSTRACT:
A selected word line that is coupled to cells for programming is biased with an initial programming voltage. The unselected wordlines that are adjacent to the selected word line are biased at an initial Vpass. As the quantity of program/erase cycles on the memory device increases, the programming voltage required to successfully program the cells decreases incrementally. Vpasstracks the decrease of the programming voltage.

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