Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2007-08-14
2007-08-14
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185170
Reexamination Certificate
active
11417575
ABSTRACT:
A selected wordline that is coupled to cells for programming is biased with a programming voltage. The unselected wordlines that are adjacent to the selected wordline are biased at a first predetermined voltage. The remaining wordlines are biased at a second predetermined voltage that is greater than the first predetermined voltage. The first predetermined voltage is selected by determining what unselected, adjacent wordline bias voltage produces a minimized Vpassdisturb in response to the selected wordline programming voltage.
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Bicksler Andrew
Mihnea Andrei
Rudeck Paul J.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Pham Ly Duy
Zarabian Amir
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