Minimization of misfit dislocations in silicon by double implant

Details Minimization of misfit dislocations in silicon by double implant Minimization of misfit dislocations in silicon by double implant

1976-12-06

1978-09-05

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 91, H01L 21265, H01L 910

Patent

active

041117190

ABSTRACT:
A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom concentration of at least 1 .times. 10.sup.-2 As atoms/total atoms in substrate, and ion implanting germanium into said substrate region. Even though the atomic radius of arsenic is very close to that of silicon -- the arsenic radius is only 0.5% smaller -- when high arsenic atom concentrations of at least 1 .times. 10.sup.-2 atoms/total atoms in the substrate are introduced in the substrate, and such high concentrations are only possible when arsenic is ion implanted, then atomic misfit dislocations will occur. The implanted germanium atoms compensate for the lattice strain in the silicon to minimize dislocations.

REFERENCES:
patent: 3485684 (1969-12-01), Mann et al.
patent: 3836999 (1974-09-01), Nishizawa
N. Yoshihiro et al., "High Dose P-Ge Double Impln. in Silicon", Ion-Impln. in Semiconductors, (S. Namba), Plenum Press, 1974.
T. H. Yeh et al., "Strain Compensation in Si by Diff. Impurities", J. Electrochem. Soc. 116, (1969) 73.
L. Eriksson et al., "Impln. . . . Group III & V, Dopants in Si . . . , Jour. Appl. Phys. 40, (1969) 842.
L. Eriksson et al., ". . . Lattice Locations . . . Dopants in Si and Ge", Appl. Phys. Lett. 14, (1969) 195.

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