Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-09-01
1999-10-12
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 25, H01L 2915
Patent
active
059658991
ABSTRACT:
A semiconductor device for detecting radiation includes a plurality of quantum well layers, each of which has bound ground and excited states, interleaved with a plurality of superlattice barrier layers, each of which has a miniband of energy states. By selection of the thicknesses and compositions of the layers, the excited states of the quantum wells have energies that are approximately equal to energies of states in the minibands. Thus, the excited states and minibands form a band of energy states that is substantially continuous across the pluralities of layers. Carriers are excited from the quantum wells' ground states to the excited states by photon absorption and are swept into and through the minibands by an externally applied electric field. The carriers are collected as photocurrent. The excited states may be selectively positioned in the minibands to tailor the properties of the devices, which can have both n-type and p-type dopants. Devices that respond to more than one wavelength band are also disclosed.
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Baumelster Bradley William
Gomes D. W.
Jackson, Jr. Jerome
Lockheed Martin Corp.
Meise W. H.
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