Miniaturized monolithic multi-layer capacitor and apparatus and

Details Miniaturized monolithic multi-layer capacitor and apparatus and Miniaturized monolithic multi-layer capacitor and apparatus and

1991-01-04

1992-06-30

Gorski, Joseph M.

Metal working

Electric condenser making

Solid dielectric type

427 541, 427 81, H01G 700

Patent

active

051251388

ABSTRACT:
A monolithic multi-layer capacitor having a central capacitively active area and two electrode joining section separated from the active area by sloped sections has dielectric layers about 1 micron thick in the active area which taper gradually to zero thickness in the sloped sections. Electrode layers in the active area have a thickness in the range from 200 to 500 Angstroms and sufficient thickness throughout the sloped sections for adequate current carrying capacity. Various acrylates are used for the dielectric layers, the number of layers ranging from a few to many thousands.
Apparatus and methods for the fabrication of such capacitors on a high speed, production scale basis employ techniques for the flash evaporation of highly reactive monomers of acrylate dielectric materials. The vapor is controllably directed to a deposition surface for condensation and subsequent curing by a field enhanced gas discharge electron beam source. The control of the dielectric vapor is accomplished by adjacent gas streams of an inert gas directed to areas of the deposition surface where deposition of the electrode material is unwanted. Monomers of the dielectric material are ultrasonically atomized in preparation for flash evaporation.

REFERENCES:
patent: 1873548 (1932-08-01), Cole
patent: 2389420 (1945-11-01), Deyrup
patent: 2614524 (1952-10-01), Haynes
patent: 2734478 (1956-02-01), Reynolds et al.
patent: 2820934 (1958-02-01), Mullikin
patent: 3024394 (1962-03-01), Salisbury
patent: 3068510 (1962-12-01), Coleman
patent: 3081201 (1963-03-01), Koller
patent: 3237273 (1966-03-01), Gunter et al.
patent: 3244953 (1966-04-01), Walsh et al.
patent: 3252830 (1966-05-01), Cummin et al.
patent: 3326718 (1967-06-01), Dill
patent: 3397085 (1968-08-01), Cariou et al.
patent: 3457614 (1969-07-01), Tibol
patent: 3466719 (1969-09-01), Sharif et al.
patent: 3518111 (1970-06-01), Wright et al.
patent: 3520987 (1970-07-01), Ohlrich
patent: 3547683 (1970-12-01), Williams et al.
patent: 3617834 (1971-11-01), Rayburn
patent: 3654532 (1972-04-01), Rayburn
patent: 3743532 (1973-07-01), Wright et al.
patent: 3819990 (1974-06-01), Hayashi et al.
patent: 4054680 (1977-10-01), Sharbaugh et al.
patent: 4076866 (1978-02-01), Platakis et al.
patent: 4121537 (1978-10-01), Maruyama et al.
patent: 4153925 (1979-05-01), Gazard et al.
patent: 4207836 (1980-06-01), Nonaka
patent: 4261798 (1981-04-01), Palmer
patent: 4277516 (1981-07-01), Behn et al.
patent: 4290384 (1981-09-01), Ausschnitt et al.
patent: 4301580 (1981-11-01), Wallace
patent: 4301765 (1981-11-01), Behn et al.
patent: 4329419 (1982-05-01), Goff et al.
patent: 4356608 (1982-11-01), Behn et al.
patent: 4363162 (1982-12-01), Price
patent: 4376329 (1983-03-01), Behn et al.
patent: 4378382 (1983-03-01), Behn
patent: 4379182 (1983-04-01), Behn et al.
patent: 4387113 (1983-06-01), Behn
patent: 4403381 (1983-09-01), Zeitlarn et al.
patent: 4414722 (1983-11-01), Wehnelt
patent: 4434452 (1984-02-01), Hamabe et al.
patent: 4453199 (1984-06-01), Ritchie et al.
patent: 4490774 (1984-12-01), Olson et al.
patent: 4502095 (1985-02-01), Pachonik
patent: 4508049 (1985-04-01), Behn et al.
patent: 4533710 (1985-08-01), Olson et al.
patent: 4543275 (1985-09-01), Akashi et al.
"Thin-Film Multilayer Capacitors Using Pyrolytically Deposited Silicon Dioxide", Richard A. Bailey and Joseph H. Nevin, pp. 361-364, 1976.
"Formation of Thin Polymer Films by Electron Bombardment", Robert W. Christy, pp. 1680-1683, 1960.
"Preparation and Properties of Dielectric Layers Formed by Surface Irradiation Techniques", Peter White, pp. 52-58, 1967.
"Polymerization of Butadiene Gas on Surfaces Under Low Energy Electron Bombardment", I. Haller and P. White, pp. 1784-1788, 1963.
"Thin-Film Multilayer Capacitors Using Pyrolytically Deposited Silicon Dioxide", Richard A. Bailey, and Joseph H. Nevin, IEEE Transactions on Parts, Hybrids and Packaging, vol. PHP-12, No. 4, Dec. 1976.
Research Report, "IC-Components with Monolithic Thin Layer Capacitors", Report #BMFT-FB-T 83-049, sponsored by the Federal Ministry for Research and Technology, Apr. 1983, German document and translation.

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