Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-02-01
2005-02-01
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S509000, C257S510000
Reexamination Certificate
active
06849918
ABSTRACT:
An improved, surface-passivated and electrically isolated solid-state device (including integrated circuits) comprises a silicon wafer with a PN junction or other electronic rectifying barrier contained therein and thermally grown or ion-implanted oxide or nitride isolating grooves in-situ formed in the wafer to isolate it into a plurality of physically integral pockets for use as electrically separately operable components. The grooves have symmetrical, centrally rounded bottoms which are located within a few microns below the PN junction or rectifying barrier. Through the unique oxide
itride forming conditions and through curvature, symmetry, and proximity effects, novel passivation and isolation results obtain.
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Crane Sara
James Poulos Consulting LLC
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