Mimicking program verify drain resistance in a memory device

Details Mimicking program verify drain resistance in a memory device Mimicking program verify drain resistance in a memory device

2008-07-15

2008-07-15

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185220

Reexamination Certificate

active

07400533

ABSTRACT:
A selected word line is biased with a program verify voltage. A predetermined quantity of unselected word lines that are between the selected word line and the bit line are biased with a modified Vpassvoltage that is determined in response to a predetermined drain resistance. In one embodiment, the predetermined quantity is all of the word lines. Other embodiments can use smaller quantities. The remaining unselected word lines are biased with a normal Vpassvoltage. The modified Vpasschanges the resistance of the memory cells, acting as pass-gates during the program verification operation, to mimic a resistance of already programmed memory cells.

REFERENCES:
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patent: 6853585 (2005-02-01), Lee et al.
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patent: 7006382 (2006-02-01), Pekny et al.
patent: 2007/0242522 (2007-10-01), Hemink

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