Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Patent
1994-09-14
1995-07-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
257741, 257759, H01L 2348, H01L 2940
Patent
active
054323797
ABSTRACT:
An MIM type electric element has an upper electrode, a lower electrode, and a barrier layer held therebetween and composed of an insulator or a semiconductor. The lower electrode contains a noble metal crystal having a facet of a plate-shaped crystal formed on a substrate. The facet has a plane given by the crystal face (111) and contains a region having a plane orientation variance angle of not more than 1.degree. by X-ray diffraction.
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Thin Solid Films, vol. 99, No. 1/2/3, 14th Jan., 1983, pp. 277-282, G. L. Larkins Jr., et al., "Langmuir-Blodgett Films As Barrier Layers In Josephson Tunnel Junctions."
Electronic Letters, vol. 20, No. 12, 7th Jun., 1984, pp. 489-491, J. Batey, et al., "GaP/Phthalocyannine Langmuir-Blodgett Film Electroluminescent Diode."
Electronic Letters, vol. 20, No. 20, 27th Sep., 1984, pp. 838-839, N. J. Thomas, et al., "GaAs/LB Film Miss Switching Device."
Eguchi Ken
Ikeda Tsutomu
Kawada Haruki
Takeda Toshihiko
Takimoto Kiyoshi
Canon Kabushiki Kaisha
Crane Sara W.
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