Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-04-17
2007-04-17
Tran, Long (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S296000, C438S239000, C438S957000
Reexamination Certificate
active
10798959
ABSTRACT:
An MIM structure and method for forming the same the method including forming a bottom conductive electrode overlying a semiconducting substrate; forming a first protection layer on the conductive electrode; forming a dielectric layer on the first protection layer; and, forming an upper conductive electrode on the dielectric layer to form a metal-insulator-metal (MIM) structure.
REFERENCES:
patent: 6759703 (2004-07-01), Matsuhashi
patent: 6916722 (2005-07-01), Huang et al.
patent: 2002/0098644 (2002-07-01), Ohtsuki
patent: 2005/0040481 (2005-02-01), Shimizu et al.
Cheng Kuo-Hsien
Hsu Shao-Ta
Liao Miao-Cheng
Lin Cheng-Chao
Wang Ying-Lang
Taiwan Semiconductor Manufacturing Co. Ltd.
Tran Long
Tung & Associates
LandOfFree
MIM structure and fabrication process with improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MIM structure and fabrication process with improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIM structure and fabrication process with improved... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3724823