Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-07-30
2010-11-30
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S301000, C257S303000, C257S306000, C257SE21008, C257SE27048, C257SE29343
Reexamination Certificate
active
07843035
ABSTRACT:
An embodiment of a MIM capacitor includes a first insulating layer formed over a wafer and a first capacitor plate formed over the wafer within the first insulating layer. The MIM capacitor further includes a second insulating layer formed over the first insulating layer, a capacitor dielectric formed over the first capacitor plate within the second insulating layer and a second capacitor plate formed over the capacitor dielectric within the second insulating layer. A recess is formed in the second capacitor plate below an upper surface of the second insulating layer and a catalytic activation layer is formed in the recess.
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Barth Hans-Joachim
Felsner Petra
Friese Gerald R.
Kaltalioglu Erdem
Huynh Andy
Infineon - Technologies AG
Slater & Matsil L.L.P.
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