MIM capacitor in a semiconductor device and method therefor

Details MIM capacitor in a semiconductor device and method therefor MIM capacitor in a semiconductor device and method therefor

2008-05-20

2008-05-20

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S381000, C257SE21016

Reexamination Certificate

active

07375002

ABSTRACT:
A MIM capacitor is formed over one or more metal interconnect layers in a semiconductor device. The capacitor has a lower plate electrode and an upper plate electrode. An insulator is formed between the plate electrodes. Prior to forming the first plate electrode a first insulating layer is deposited over the metal of an interconnect layer. The first insulating layer is planarized using a chemical mechanical polish (CMP) process. A second insulating layer is then deposited over the planarized first insulating layer. The first plate electrode is formed over the second insulating layer. An insulator is formed over the first plate electrode and functions as the capacitor dielectric. A second plate electrode is formed over the insulator. Planarizing the first insulating layer and depositing a second insulating layer over the first insulating layer, reduces defects and produces a more reliable capacitor.

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Armacost et al, “A High Reliability Metal Insulator Metal Capacitor for 0.18 μm Copper Technology” 2000, IEEE.

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