Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-02-01
2011-02-01
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21019, C257SE23144, C257SE27113, C438S387000
Reexamination Certificate
active
07880268
ABSTRACT:
A method for forming a MIM-type capacitor by filling of trenches by conformal depositions of insulating materials and of conductive materials, two successive electrodes of the capacitor including on either side of a thin vertical insulating layer at least one conductive layer of same nature, including the step of lowering the level of the conductive layers with respect to the level of the insulating layer separating them.
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International Search Report from a corresponding French Application No. 0651723, filed May 12, 2006.
Cremer Sébastien
Perrot Cédric
Richard Claire
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Thomas Toniae M
Wilczewski Mary
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