Millimeter waveguide oscillator and amplifier structure

Oscillators – With distributed parameter resonator

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330 5, 330 34, 330 56, 330 61A, 331107R, H03B 714, H03F 310, H03F 360

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039744590

ABSTRACT:
Disclosed is a millimeter wave waveguide structure adapted for operation with negative resistance devices, such as solid state avalanche breakdown diodes, at frequencies up to about 170 GHz or higher. A central portion of the structure is formed by a cylindrical metallic impedance transformer and bias pin which has a major face thereof substantially parallel to a common lower waveguide wall of the structure. A negative resistance device is DC coupled between this common waveguide wall and one edge of the impedance transformer, so that the impedance transformer also provides the required DC bias to the negative resistance device. Other portions of the waveguide structure include a first upper waveguide wall, immediately adjacent one side of the impedance transformer, and this wall, together with the common lower waveguide wall, forms a tuning cavity into which a sliding tuning short is positioned. Another portion of the waveguide structure includes a second, upper waveguide wall immediately adjacent the opposite side of the impedance transformer, and this wall together with the common lower waveguide wall, confines millimeter wave power from the negative resistance device to a predetermined path and direction. Suitable waveguide transition means are coupled to the second upper waveguide wall for coupling the above structure to a full height waveguide.

REFERENCES:
patent: 3913035 (1975-10-01), Havens
Bowers et al., Digest of Technical Papers of the 1973 IEEE International Solid-State Circuits Conference, pp. 48-49, (2-14-73).
Kuno et al., Digest of Technical Papers of the 1973 IEEE International Solid- Circuits Conference, pp. 50-51, (2-14 73).

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