Millimeter-wave unilateral low-noise amplifier

Details Millimeter-wave unilateral low-noise amplifier Millimeter-wave unilateral low-noise amplifier

2007-09-04

2007-09-04

Nguyen, Khanh Van (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including frequency-responsive means in the signal...

C330S310000, C330S311000

Reexamination Certificate

active

10731341

ABSTRACT:
Principles of the present invention provide improved amplifiers such as low-noise amplifiers. While such amplifiers may be suitable in many applications, such amplifiers may provide improved noise, gain and stability performance at millimeter-wave frequencies. In a first aspect of the invention, an amplifier includes a first amplifying stage including a common-base transistor, and a second amplifying stage, coupled to the first amplifying stage, including a cascode transistor pair. The amplifier may be implemented in accordance with a silicon-based technology (e.g., silicon germanium) and may employ microstrip shunt-stub transmission lines as matching networks.

REFERENCES:
patent: 5933057 (1999-08-01), Tchamov et al.
patent: 6166599 (2000-12-01), Aparin et al.
patent: 6249186 (2001-06-01), Ebihara et al.
patent: 6806777 (2004-10-01), Franca-Neto
patent: 2003/0030494 (2003-02-01), Huang
Tang et al., “A 1.2 V, 1.8 GHz CMOS two-stage LNA with common-gate amplifier as an input stage”, ASIC, 2003, Proceedings, 5thInternational Conference on vol. 2, Oct. 21-24, 2003, p. 1044, IEEE.
L. Tran et al., “High Performance, High Yield Millimeter-Wave MMIC LNAs Using InP HEMTs,” IEEE IMS Digest, p. 9-12, Jun. 1996.
M. Siddiqui et al., “GaAs Components for 60GHz Wireless Communication Applications,” GaAs Mantech Conference, pp. 1-4, Apr. 2002.
A. Fujihara et al., “High Performance 60-GHz Coplanar MMIC LNA Using InP Heterojunction FETs with AlAs/InAs Superlattice Layer,” IEEE IMS Digest, p. 21-24, Jun. 2000.
K. Nishikawa et al. “Compact LNA and VCO 3-D MMICs Using Commercial GaAs PHEMT Technology for V-band Single-chip TRX MMIC,” IEEE IMS Digest, p. 1717-1720, Jun. 2002.
K. Onodera et al., “V-Band Monolithic Low-Noise Amplifiers Using Ion-Implanted n+-Self-Aligned GaAs MESFETs,” IEEE Mircowave Guided Wave Letters, vol. 9, No. 4, pp. 148-150, Apr. 1999.
B. Jagannathan et al., “Self-Aligned SiGe NPN Transistors with 285 GHz fMAXand 207 GHz fTin a Manufacturable Technology,” IEEE Electron Device Letters, vol. 23, No. 5, pp. 258-260, May 2002.

Affiliated with

Also associated with

Rating

Millimeter-wave unilateral low-noise amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Millimeter-wave unilateral low-noise amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Millimeter-wave unilateral low-noise amplifier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3800701