Millimeter-wave power limiter

Details Millimeter-wave power limiter Millimeter-wave power limiter

1981-02-12

1982-08-10

Nussbaum, Marvin L.

Wave transmission lines and networks

Automatically controlled systems

Impedance matching

333164, 333258, 333247, 357 51, H01P 115, H01P 316, H01L 2706

Patent

active

043440479

ABSTRACT:
Disclosed is a millimeter wave bulk effect RF power limiter consisting of a lanar PIN diode formed on a gallium arsenide (GaAs) substrate which also comprises the waveguide structure for RF energy in the 60-300 GHz range. The PIN diode is comprised of a wedge of intrinsic type semiconductor material formed across the top surface of the substrate and having mutually opposing regions of p and n type semiconductor material fabricated in the side edges of the wedge to which is attached planar beam leads. With suitable electrical operating potentials applied to the PIN diode avalanche breakdown occurs at a critical RF power level which acts to limit the flow of RF energy flow in the structure past the location of the PIN diode. Such a structure permits the device to be integrated into the front end sections of receivers utilized in communications, missile guidance and radar systems operable in the millimeter and sub-millimeter frequency range.

REFERENCES:
patent: 3226661 (1965-12-01), Garver et al.
patent: 3750055 (1973-07-01), Funck
patent: 4200880 (1980-04-01), Frey
patent: 4292643 (1981-09-01), Kellner et al.

Affiliated with

Also associated with

Rating

Millimeter-wave power limiter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Millimeter-wave power limiter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Millimeter-wave power limiter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1533097