Amplifiers – With semiconductor amplifying device – Integrated circuits
Reexamination Certificate
2011-06-28
2011-06-28
Choe, Henry K (Department: 2817)
Amplifiers
With semiconductor amplifying device
Integrated circuits
C330S310000
Reexamination Certificate
active
07969245
ABSTRACT:
Embodiments of a high-frequency millimeter-wave amplifier are generally described herein. The high-frequency millimeter-wave amplifier may be constructed on a substrate to operate at a frequency of at least 75 GHz. In some embodiments, the millimeter-wave amplifier may include at least first, second, third and fourth amplifier stages coupled in series. A single drain bias bond pad provided on the substrate to provide a drain bias voltage to the drains of the first, second, third and fourth amplifier stages. Drain bias lines may be electrically coupled to the single drain bias bond pad and extend at least partially alongside and between some of the amplifier stages. A signal path through the second amplifier stage extends in a direction opposite of signal paths through the first and third amplifier stages. In some embodiments, a 95 GHz amplifier is provided and configured occupy an area on the substrate of no greater than approximately four square millimeters.
REFERENCES:
patent: 4631492 (1986-12-01), Magarshack et al.
patent: 5966520 (1999-10-01), Buer et al.
patent: 6388528 (2002-03-01), Buer et al.
patent: 6583673 (2003-06-01), Ahl et al.
patent: 6867651 (2005-03-01), Buer et al.
patent: 7233199 (2007-06-01), Westwick et al.
patent: 7843273 (2010-11-01), Brown et al.
patent: 2005/0175069 (2005-08-01), Zelley et al.
patent: 2008/0231374 (2008-09-01), Buer et al.
patent: 2010/0109784 (2010-05-01), Brown et al.
patent: WO 2010053554 (2010-05-01), None
“U.S. Appl. No. 12/266,229, Non-Final Office Action mailed Feb. 8, 2010”, 7 pgs.
“U.S. Appl. No. 12/266,229, Response filed Jul. 6, 2010 to Non Final Office Action mailed Feb. 8, 2010”, 12 pgs.
“ U.S. Appl. No. 12/266,229 Notice of Allowance mailed Jul. 26, 2010”, 6 pgs.
“HRL Laboratories Circuit Layout Diagrams”, [Online]. Retrieved from the Internet: <URL: http://hrl.com/media/gan/>, (Aug. 27, 2008), 1 pgs.
“International Application Serial No. PCT/US2009/05986, Search Report mailed Jan. 11, 2010”, 2 pgs.
“International Application Serial No. PCT/US2009/05986, Written Opinion mailed Jan. 11, 2010”, 7 pgs.
Brown Andrew K.
Brown Kenneth W.
Choe Henry K
Gorrie Gregory J.
Raytheon Company
Schwegman Lundberg & Woessner, P.A.
LandOfFree
Millimeter-wave monolithic integrated circuit amplifier with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Millimeter-wave monolithic integrated circuit amplifier with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Millimeter-wave monolithic integrated circuit amplifier with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2709082