Millimeter-wave cascode amplifier gain boosting technique

Details Millimeter-wave cascode amplifier gain boosting technique Millimeter-wave cascode amplifier gain boosting technique

2007-05-09

2009-02-10

Choe, Henry K (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural stages cascaded

C330S310000

Reexamination Certificate

active

07489201

ABSTRACT:
Disclosed is a gain boosting technique for use with millimeter-wave cascode amplifiers. The exemplary technique may be implemented using a 0.18 μm SiGe process (FT=140 GHz). It has also been shown that the technique is effective for CMOS processes with comparable FT. An exemplary gain-enhanced cascode stage was measured to have higher than 9 dB gain with a 1-dB bandwidth above 6 GHz with a DC power consumption of 13 mW. In addition, one cascode stage without gain boosting may be cascaded with two gain-boosted cascode amplifier stages to implement a three-stage LNA. The measured stable gain is higher than 24 dB at 60 GHz with a 3-dB bandwidth of 3.1 GHz for 25 mW of DC power consumption. It is believed that this is the first 60 GHz LNA with a higher than 20 dB gain using a 0.18 μm SiGe process.

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