Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-06-28
2011-06-28
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S750000, C257S758000, C257SE21597, C438S629000, C438S637000, C438S672000
Reexamination Certificate
active
07969011
ABSTRACT:
A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arraigned as follows. An insulating region has a trench formed therein. The trench has a bottom and side walls. The first electrode, which comprises a first metal, is on the side walls and over the bottom of the trench. A first insulator has a first interface with the first electrode. At least a portion of the first insulator is within the trench. A second insulator has a second interface with the first insulator. At least a portion of the second insulator is within the trench. The second electrode, which comprises a second metal, is in contact with the second insulator. The second electrode at least partially fills the trench.
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Chen Xiying
Kumar Tanmay
Ping Er-Xuan
Rabkin Peter
Sekar Deepak C.
Clark Jasmine J
SanDisk 3D LLC
Vierra Magen Marcus & DeNiro LLP
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