Migration of uniform fine lines for bodies of semiconductor mate

Details Migration of uniform fine lines for bodies of semiconductor mate Migration of uniform fine lines for bodies of semiconductor mate

1978-09-21

1979-10-23

Ozaki, G.

Metal treatment

Compositions

Heat treating

148178, 148188, H01L 700

Patent

active

041719905

ABSTRACT:
Metal wires of widths as small as 10 microns are migrated by thermal gradient zone melting processing as a molten zone through a body of semiconductor material. By calculating the width and thickness of the metal wires deposited on the wafer surface, improved uniform doped regions are produced. The method is restricted to the (100) planar orientation.

REFERENCES:
patent: 3998662 (1976-12-01), Anthony et al.

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