Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-10-13
2010-12-07
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S094000, C257S096000, C372S045013, C372S046012, C438S029000, C438S401000, C438S462000
Reexamination Certificate
active
07847310
ABSTRACT:
Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well.
REFERENCES:
patent: 5960018 (1999-09-01), Jewell et al.
patent: 6546031 (2003-04-01), Jewell et al.
patent: 6687281 (2004-02-01), Coldren et al.
patent: 2005/0184303 (2005-08-01), Tandon et al.
Finisar Corporation
Toledo Fernando L
Workman Nydegger
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