Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2006-07-11
2008-10-14
Toledo, Fernando L (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S462000, C372S045010, C257S096000, C257S098000
Reexamination Certificate
active
07435660
ABSTRACT:
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using controlled group V fluxes and temperatures. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V materials at a given group V flux and then raising the group V flux to saturate the surface of the flattening layer with the group V material. A cap layer is also formed over the quantum well. Where nitrogen is used, the systems incorporate a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.
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Notification
Finisar Corporation
Toledo Fernando L
Workman Nydegger
LandOfFree
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