MIGFET circuit with ESD protection

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

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C257S355000

Reexamination Certificate

active

07817387

ABSTRACT:
An electrostatic discharge (ESD) protected circuit is coupled to a power supply voltage rail and includes a multiple independent gate field effect transistor (MIGFET), a pre-driver, and a hot gate bias circuit. The MIGFET has a source/drain path coupled between an output pad and the power supply voltage rail and has a first gate terminal and a second gate terminal. The pre-driver circuit has an output. The hot gate bias circuit is coupled to the first gate terminal of the MIGFET, and the output of the pre-driver circuit is coupled to the second gate terminal of the MIGFET. The hot gate bias circuit is configured to apply a bias voltage to the first gate terminal of the MIGFET during an ESD event that increases the breakdown voltage of the MIGFET so as to better withstand the ESD event.

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PCT/US2008/086180 International Search Report and Written Opinion mailed Jun. 24, 2009.

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