Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Reexamination Certificate
2008-01-09
2010-10-19
Fureman, Jared (Department: 2836)
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
C257S355000
Reexamination Certificate
active
07817387
ABSTRACT:
An electrostatic discharge (ESD) protected circuit is coupled to a power supply voltage rail and includes a multiple independent gate field effect transistor (MIGFET), a pre-driver, and a hot gate bias circuit. The MIGFET has a source/drain path coupled between an output pad and the power supply voltage rail and has a first gate terminal and a second gate terminal. The pre-driver circuit has an output. The hot gate bias circuit is coupled to the first gate terminal of the MIGFET, and the output of the pre-driver circuit is coupled to the second gate terminal of the MIGFET. The hot gate bias circuit is configured to apply a bias voltage to the first gate terminal of the MIGFET during an ESD event that increases the breakdown voltage of the MIGFET so as to better withstand the ESD event.
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PCT/US2008/086180 International Search Report and Written Opinion mailed Jun. 24, 2009.
Khazhinsky Michael G.
Mathew Leo
Miller James W.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Fureman Jared
Singh Ranjeev
Thomas Lucy
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