Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-05-27
2009-06-16
Wilczewski, M. (Department: 2822)
Coherent light generators
Particular active media
Semiconductor
Reexamination Certificate
active
07548571
ABSTRACT:
A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. The gain material is susceptible to utilization of direct diode or fiber laser pumping of a microchip laser with a level of power density providing formation of positive lens and corresponding cavity stabilization as well as threshold population inversion in the laser material. Multiple applications of the laser material are contemplated in the invention.
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Federov Vladimir V.
Mirov Sergey B.
Fish & Richardson P.C.
The UAB Research Foundation
Wilczewski M.
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