Microwave transmission line having dielectric film layers...

Wave transmission lines and networks – Long lines – Strip type

Reexamination Certificate

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C257S664000

Reexamination Certificate

active

11033803

ABSTRACT:
A microwave transmission line includes a substrate of high-resistivity silicon, a first dielectric film and a second dielectric film successively formed on the principal surface of the substrate and having different compositions, and a conductor film formed with at least the first dielectric film interposed between the conductor film and the substrate. One of the first and second dielectric films has positive space charges and the other has negative space charges. A signal electric field propagates through the substrate, the first dielectric film and the second dielectric film.

REFERENCES:
patent: 5986331 (1999-11-01), Letavic et al.
patent: 03-210803 (1991-09-01), None
patent: 8-316420 (1996-11-01), None
Gamble, H.S., et al. “Low-loss CPW Lines on Surface Stabilized High Resistivity Silicon.” IEEE Microwave and Guided Wave Letter, IEEE Inc, New York, US, Vol. 9, No. 10, Oct. 1999, pp. 395-397.
Reyes, Adolpho C., et al. “Coplanar Waveguide and Microwave Inductor on Silicon Substrates.” IEEE Transactions on Microwave Theory and Techniques, vol. 43, No. 9, Sep. 1995, pp. 2016-2022.
Wu, Yunhong., et al. “SiO2 Interface Layer Effects on Microwave loss of high-Resistivity CPW-Line.” IEEE Microwave and Guided Wave Letter, vol. 9, No. 1, Jan. 1999, pp. 10-12.

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