Microwave transistor with double heterojunction

Details Microwave transistor with double heterojunction Microwave transistor with double heterojunction

1988-08-04

1990-11-27

Jackson, Jr., Jerome

357 16, 357 4, 357 42, H01L 29205, H01L 2980

Patent

active

049740385

ABSTRACT:
A microwave transistor made with group III-V materials, such as GaAs and AlGaAs, is disclosed. This transistor essentially comprises a double heterojunction formed by a first layer of material with a big forbidden gap, n doped for example, a second non-doped layer with a narrow forbidden gap and a third p doped layer with a wide forbidden gap. Under the effect of the electrical field, there may be formed, simultaneously or not simultaneously, in the second layer, a two-dimensional electron gas at the interface with the first layer and a two-dimensional hole gas at the interface with the third layer. By bringing the thickness of the layers into play, the characteristics of the n and p channels can be made symmetrical.

REFERENCES:
patent: 4328484 (1982-05-01), Denecke
patent: 4556895 (1985-12-01), Ohata
patent: 4603469 (1986-08-01), Armiento
patent: 4743951 (1988-05-01), Chang
patent: 4748484 (1988-05-01), Takakawa
patent: 4791072 (1988-12-01), Kiel
patent: 4835581 (1989-05-01), Kuroda et al.
Patent Abstracts of Japan, vol. 11, No. 224, (E-525)[2671], Jul. 21, 1987.
IEEE Transactions of Electron Devices, vol. ED-28, No. 7, Jul. 1981, pp. 790-795, D. Delagebeaudeuf et al., "Charge Control of the Heterojunction Two-Dimensional Electron Gas . . . ".
IEEE Transactions on Electron Devices, vol. ED-29, No. 6, Jun. 1982, pp. 955-960, D. Delagebeaudeuf et al., Metal-(n)AlGaAs-GaAs Two-Dimensional Electron Gas FET.

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