Microwave semiconductor switch

Details Microwave semiconductor switch Microwave semiconductor switch

1987-05-01

1988-12-06

Gensler, Paul

Wave transmission lines and networks

Plural channel systems

Having branched circuits

333247, H01P 115

Patent

active

047898461

ABSTRACT:
A microwave semiconductor switch wherein first and second field effect transistors and first, second and third input/output microstrip lines are integrally formed on a semiconductor substrate. The first field effect transistor is connected in series between the second input/output line and a junction point of the first, second and third input/output lines at a position adjacent to the junction point. The second field effect transistor is connected at a second position spaced approximately a quarter of the wavelength from the junction point between the second position and the ground. The drain electrodes and source electrodes of the first and second transistors are placed at the same potential. The transmission paths for microwaves are switched by varying a bias voltage applied to the gate electrodes of the field effect transistors.

REFERENCES:
patent: 3178659 (1965-04-01), Smith et al.
patent: 3452299 (1969-06-01), Angel
patent: 4556808 (1985-12-01), Coats
Resonated GaAs FET Devices for Microwave Switching, McLevige et al., IEEE Trans. on ED, vol. ED-28, No. 2, Feb. 1981, pp. 198-204.
An X-Band 10W Monolithic Transmit-Receive GaAs FET Switch, Ayasli et al., IEEE Trans. on ED, CH1784-8/82, pp. 42-46.

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