Microwave semiconductor integrated circuit

Details Microwave semiconductor integrated circuit Microwave semiconductor integrated circuit

1997-02-05

1999-08-03

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257275, H01L 2334

Patent

active

059329262

ABSTRACT:
A microwave semiconductor integrated circuit having high isolation includes a wiring-side substrate including a transmission line in slots at a surface; an element-side substrate having an active element on a surface, the transmission line being embedded in the wiring-side substrate; and metal bumps electrically connecting the transmission line embedded in the wiring-side substrate to electrodes of the active element on the element-side substrate. Therefore, a connection between a transmission line and electrodes of an element, such as an FET or the like, can be easily realized without being affected by a difference in positional level between the transmission line and the electrodes. In addition, the element on the element-side substrate is not adversely affected by the subsequent fabrication of the slots and wiring layers and, therefore, the reliability of the integrated circuit is not adversely affected. Furthermore, since the element and the transmission line are mounted on separate substrates, focusing is easy during the exposure for forming masks used for etching the slots and wiring layers in the wiring-side substrate because there is no unevenness within the substrate surface, facilitating the fabrication of masks.

REFERENCES:
patent: 5138436 (1992-08-01), Koepf
patent: 5608263 (1997-03-01), Drayton et al.

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