Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2009-02-11
2011-12-27
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S280000, C257S281000, C257SE29127, C257SE29311, C257SE29089
Reexamination Certificate
active
08084793
ABSTRACT:
An undoped AlGaN layer13is formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrode15and a source electrode16forming ohmic junction with the undoped AlGaN layer13are formed separately from each other on the undoped AlGaN layer13. A gate electrode17composed of metal Ni and Au laminated in this order is formed between the drain electrodes15and the source electrode16on the undoped AlGaN layer13. The end portion17-2of the gate electrode17is formed on the underlying metal18formed by a metal containing Ti via an insulating film14on a GaN buffer layer12surrounding the undoped AlGaN layer13.
REFERENCES:
patent: 7508014 (2009-03-01), Tanimoto
patent: 10-178189 (1998-06-01), None
patent: 2005-322811 (2005-11-01), None
Kabushiki Kaisha Toshiba
Karimy Mohammad T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smith Bradley K
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