Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1994-05-05
1995-09-19
Gensler, Paul
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
333247, H03F 360
Patent
active
054519055
ABSTRACT:
A semiconductor device microwave integrated circuit includes at least a transistor stage which stage includes a microwave matching circuit and a d.c. bias circuit interconnected at a link node (A). The transistor stage further includes a stabilizing circuit which includes an open stub line connected to the link node. The open stub line connected to the link node is a .lambda./4 line which at the operating frequency imposes a short circuit on the link node. A matching circuit made up of a low-value resistor connected to ground in the microwave mode through a d.c. isolating capacitor is connected to the link node. A .lambda./4 line of the radial type (.lambda./4 radial stub) provides broadband operation.
REFERENCES:
patent: 4152680 (1979-05-01), Harrison
patent: 5229732 (1993-07-01), Furutani et al.
Wang et al., "High-Performance W-Band Monolithic Pseudomorphic InGaAs HEMT LNA's and Design/Analysis Methodology", IEEE Transactions on Microwave Theory and Techniques, vol. 40, No. 3, Mar. 1992, pp. 417-428.
1991 IEEE MTT-S International Microwave Symposium Digest, vol. III, Jun. 10-14, 1991, pp. 933-936.
Cordier Christophe
Gamand Patrice
Gensler Paul
Kraus Robert J.
U.S. Philips Corporation
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