Microwave semiconductor device capable of controlling a threshol

Details Microwave semiconductor device capable of controlling a threshol Microwave semiconductor device capable of controlling a threshol

1991-10-28

1992-12-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257472, 257476, 257522, H01L 2980

Patent

active

051683296

ABSTRACT:
A microwave semiconductor device of this invention is made by arranging a plurality of active regions of Schottky barrier FET on a single semiconductor substrate in a common gate width direction, and gate electrodes are linearly connected to each other. Side-gate electrodes each formed by an ohmic metal are arranged on the semiconductor substrate between adjacent active regions. In this portion, a gate wiring layer is arranged so as to cross over each side-gate electrode. With this arrangement, a sufficient side gate effect on the entire FET having gate electrodes connected to have a large length, can be obtained, and a threshold voltage can be controlled after manufacturing.

REFERENCES:
patent: 4549197 (1985-10-01), Brehm et al.
patent: 4974039 (1990-11-01), Schindler et al.
patent: 4977434 (1990-12-01), Delagebeaudeuf et al.
patent: 4982247 (1991-01-01), Aoki et al.
patent: 5070376 (1991-12-01), Shiga
Shiga Nobuo, Temperature Compensating Device, Aug. 29, 1989, vol. 13 p. 390, Patent Abstracts of Japan.
Kato Masahiro et al., Semiconductor Device, Jul. 14, 1987, vol. 13, p. 198, Patent Abstracts of Japan.
Tsutomu Takenaka, A Miniaturized, Broadband MMIC Mixer, 11th Annual GaAs IC Symposium Technical Digest Oct. 22-25, 1989, pp. 193-196.

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