Microwave sample-and-hold unit with transistor

Details Microwave sample-and-hold unit with transistor Microwave sample-and-hold unit with transistor

1990-01-25

1991-04-30

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250551, H01J 4014

Patent

active

050120840

ABSTRACT:
Disclosed is a microwave (1 GHZ) sample-and-hold unit having a field-effect transistor, to which an input signal is applied, and a storage capacitor. The transistor is made of materials of the III-V group, such as GaAs or InP, and Its channel region is controlled by an optical control device formed by an optic fiber and a pulsed laser semiconductor. In order to reduce the switching time of the transistor, this transistor and the laser are both biased at points close to their thresholds. The disclosed device can be applied in signal processing, at frequencies of the order of 1 GHz.

REFERENCES:
patent: 4068135 (1978-01-01), Sonobe et al.
patent: 4140914 (1979-02-01), Jones
patent: 4369371 (1983-01-01), Hara et al.
patent: 4629901 (1986-12-01), Nishizawa
Patent Abstracts of Japan, vol. 4, No. 185 (E-38), Dec. 19, 1980, & JP-A-55 127 706, M. Hideki, "Frequency Optical Control System of Superhigh Frequencyactive Circuit".
IBM Technical Disclosure Bulletin, vol. 29, No. 5, Oct., 1986, pp. 1968-1969, New York, US, "Subpicosecond Optical Sampling Gate".
Patent Abstracts of Japan, vol. 9, No. 75 (E-306), Apr. 4, 1985, & JP-A-59 210 701, M. Hideki, "Switching Device for Path of Ultrahigh Frequency Bandsignal".

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