Microwave reflectiion amplifiers having increased bandwidth

Details Microwave reflectiion amplifiers having increased bandwidth Microwave reflectiion amplifiers having increased bandwidth

1988-02-25

1990-02-20

Moskowitz, Nelson

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

230177, H03F 310, H03F 360

Patent

active

049029851

ABSTRACT:
A four diode reflection amplifier having a relatively wide bandwidth of at least 5 percent over the frequency range of 43.5 to 45.5 GHz includes three magic Ts arranged to provide a 4-way passive power combiner. The 4-way passive power combiner symmetrically couples each of the four diode amplifiers to an input/output port of the reflection amplifier. To provide the improved bandwidth performance, a perturbation impedance in the form of a single shunt capacitance is inserted at the input/output port of the reflection amplifier to provide a selected perturbation in the load impedance and hence the reflection characteristic seen by the reflection amplifier over a selected band of operation of the amplifier.

REFERENCES:
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patent: 4189683 (1980-02-01), Fassett et al.
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patent: 4517527 (1985-05-01), Aihara et al.
patent: 4583058 (1986-04-01), McClymonds
patent: 4643992 (1987-01-01), Brown
Ma et al., "V-Band High-Power Impatt Amplifier", Conf. Growth for the 80's, 1980, IEEE TTT-S Microwave Symp. D. C., pp. 73-74.
Alderstein et al., "Network Analysis . . . Magictic", Microw. S., vol. 31, #7, pp. 99-105, 7/88, Abst. only.
Ward et al., "A Stable Broadband IMPATT Amplifier", Int. Microw. Sysm. Dig., 6/84, S. F. Calif., pp. 486-488.

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