Microwave receiver front end design

Telecommunications – Receiver or analog modulated signal frequency converter – Noise or interference elimination

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

455282, 455285, 455311, H04B 110, H04B 126

Patent

active

045162700

ABSTRACT:
The invention is a high frequency hetrodyne receiver front end for receiving a communications signal comprising a desired information frequency and an undesired image frequency. The receiver comprises a bandpass filter, a preamplifier responsive to the bandpass filter, a mixer and a coupler means between the preamplifier and the bandpass filter. The coupler means defines a reactive short at the undesired image frequency due to impedance characteristics of the coupler means. The coupler means thereby eliminates the image frequency noise at the input of the preamplifier. Preferrably the coupler means is a transmission line of a length L where L equals .eta..pi./.beta. and .eta. is an integer and .beta. is proportional to the wavelength of the image frequency.

REFERENCES:
patent: 1850831 (1932-03-01), Elliott
"LNA Proves New GaAs FET's Low Noise Performance" Microwave Journal, Oct. 1982, pp. 174-176.
"Production Experience and Lower Prices Put GaAs FETs Into Competition" MSN, Oct. 1982, p. 147.
"Broadband Fixture Characterizes Any Packaged Microwave Transistor" by Richard Q. Lane, Roger D. Pollard, Mario A. Maury and James K. Fitzpatrick, Microwave Journal, Oct., 1982.
"Amplifier Application Notes" from Microwave Journal, Oct., 1982.
"A GaAs FET Primer: Understanding These Vital Devices" published in Circle Reader, Oct., 1982 written by R. J. Hamilton, Jr. and Northe K. Osbrink.
"Simultaneous Input Power Match and Noise Optimization Using Feedback" by Jakob Engberg from Proceedings of European Microwave Conference, 1974.
"Stability Considerations of Low-Noise Transistor Amplifiers with Simultaneous Noise and Power Match" by Les Besser Farinon Electric San Carlos, CA.
"Simplify N.F. Calculations of Cascaded Two-Ports" by Fred E. Gardiol published in Microwaves, Apr., 1978.
"Theory of Noisy Fourpoles" by H. Rothe, Ire and W. Dahlke, from Proceedings of the Ire, pp. 811 thru 817.
"Microwave Integrated Circuit Receivers at Millimetric Wavelengths" by T. H. Oxley, K. J. Ming and B. J. Climer, The General Electric Company Limited, Hirst Research Centre, Wembley, England.
"Microwave Transistors" by Robert J. Hamilton, Jr. and Northe K. Osbrink, published in Electronic Engineering Times, Feb. 15, 1982, pp. 68-69.
"Third-Order Intermodulation Distortion and Gain Compression in GaAs FET's by Rodney S. Tucker, member IEEE, IEEE Transactions on Microwave Theory And Techniques, vol. MTT-27, No. 5, May, 1979.
"A 6 GHz Amplifier Using the HFET-1101 GaAs FET" published by Hewlett Packard Components.
"Performance of GaAs MESFET's at Low Temperatures" by Charles A. Liechti and Roderic B. Larrick, publilshed in IEEE Transactions On Microwave Theory And Techniques, Jun. 1976.
"Intermodulation Distortion in Microwave Mesfet Amplifiers" by Ramesh K. Gupta, Colin G. Englefield, Paul A. Goud from Dept. of Electrical Engineering, The University of Alberta, Edmonton, Alberta T6G 2G7 Canada, pp. 405-407.
"Design of Microwave GaAs MESFET's for Broad-Band Low Noise Amplifiers" by Hatsuaki Fukui published in IEEE Transactions On Microwave Theory And Techniques, vol. MTT-27, No. 7, Jul. 1979, pp. 643-649.
"A Low Noise 4 GHz Transistor Amplifier Using the HXTR-6101 Silicon Bipolar Transistor" by Hewlett Packard.
"RF Small Signal Design Using Two-Port Parameters" by Roy Hejhall Motorola Semiconductor Application Note AN-215A.
"UHF Amplifier Design Using Data Sheet Design Curves" prepared by Applications Engineering for Motorola Semiconductor Application Note AN-419.
"Field Effect Transistors in Theory and Practice" by Applications Engineering, Motorola Semiconductor, Application Note AN-211A.
"Broadband Monolithic MIC Power Amplifier Development" by James E. Degenford, Ronald G. Freitag, Daniel C. Boire and Marvin Cohn for _Technical Feature in Microwave Journal, pp. 89-189, Mar., 1982.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microwave receiver front end design does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave receiver front end design, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave receiver front end design will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1804196

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.