Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1982-08-31
1984-11-13
Wilbur, Maynard R.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330297, 343 171R, 375 59, H03F 360, H03F 3193
Patent
active
044828675
ABSTRACT:
In a microwave power transmitter for Doppler radars for terrestrial surveillance, use is made of four stages in series comprising first and second preamplifiers, and first and second power amplifiers. These stages are supplied by a group of separate voltage regulators. These regulators are controlled by a control circuit which makes it possible to cut off the stabilized voltage between instants of transmission, that is to say between microwave pulses of a radar signal. A feedback device makes it possible to stabilize the output level by causing variation of the gain of the first preamplifier by means of its supply voltage.
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Electronic Design, FET Makes High Level Phone-Sensitive Detector, 10/25/63, Electronic Design, pp. 80-81.
Naster et al., Microwave Amplifiers, International Solid States Circuits Confer., pp. 72-73.
Haentjens Yan
Marchand Maurice
LMT-Radio Professionnelle
Steinberger Brian
Wilbur Maynard R.
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