Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1998-02-04
1999-03-09
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257532, 257531, 330300, 330307, H01L 27102, H01L 2973
Patent
active
058805176
ABSTRACT:
A microwave power transistor device (20) is formed with impedance matching circuitry from a single elongated transistor die (70). Each of one or more transistor elements (56) is integrally formed with a blocking DC capacitor (54) on a common substrate of the transistor die. A wire (60 or 92) is connected between accurately positioned capacitor and transistor base connection points (90 and 80) to provide matching inductance for the parasitic base-collector capacitance of the transistor.
REFERENCES:
patent: 3953875 (1976-04-01), Cave et al.
patent: 4868613 (1989-09-01), Hirachi
"Silicon Bipolar Microwave Power Transistors", Richard Allison, IEEE Transactions on Microwave Theory and Techniques, vol. MTT-27, No. 5, May 1979, pp. 415-422.
Guay John
Northrop Grumman Corporation
Sutcliff Walter G.
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