Microwave power SOI-MOSFET with high conductivity metal gate

Details Microwave power SOI-MOSFET with high conductivity metal gate Microwave power SOI-MOSFET with high conductivity metal gate

1995-12-28

1997-10-28

Niebling, John

Fishing, trapping, and vermin destroying

437 29, 437192, H01L 21265, H01L 2712

Patent

active

056817614

ABSTRACT:
A technique for making a microwave, high power SOI-MOFET device is set forth together with such a device. An important aspect of this structure is the presence of high conductivity metal gate fingers for the device.

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