Microwave power limiter comprising a single-gate FET

Details Microwave power limiter comprising a single-gate FET Microwave power limiter comprising a single-gate FET

1977-10-03

1979-07-24

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307264, 328171, 328172, 333 17L, H03G 1104, H04B 304

Patent

active

041624122

ABSTRACT:
A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a single gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.

REFERENCES:
patent: 4079325 (1978-03-01), Mawhinney et al.
Fukuda et al., "A New Microwave Amplitude Limiter Using GaAs Field Effect Transistor"; IEEE Microwave Theory and Techniques Conf.; Jun. 1977.
Int'l Microwave Symposium; 6/1977, in Microwaves (pub.), pp. 9-10.

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