Microwave power amplifier

Details Microwave power amplifier Microwave power amplifier

1997-07-07

1999-03-30

Pascal, Robert

Amplifiers

With semiconductor amplifying device

Including frequency-responsive means in the signal...

330310, H03F 3191

Patent

active

058894349

ABSTRACT:
A microwave power amplifier having n stages (n is an integer of at least two), which uses bipolar transistors as amplifying elements. Grounded electrodes, bias applying methods, and bias values of the bipolar transistors of the respective stages are set so that phase rotations of output powers of bipolar transistors of m stages (m is an integer of 1.ltoreq.m.ltoreq.n-1) among the n stages are canceled by phase rotation of at least one of the other bipolar transistors of the (n-m) stages. Therefore, the total phase rotation of the power amplifier can be neutralized, resulting in a microwave power amplifier having excellent distortion characteristics.

REFERENCES:
patent: 5051706 (1991-09-01), Zushi
patent: 5250912 (1993-10-01), Fujita
patent: 5493255 (1996-02-01), Murtojarvi
patent: 5745857 (1998-04-01), Maeng et al.
Ogura et al., "Simple Linearizer Using Si-Bipolar Transistor", 1993 Spring Conference of the Institute of Electronics, Information and Communication Engineers, p. 2-523.
Nakayama et al., "A Novel Amplitude And Phase Linearizing Technique For Microwave Power Amplifiers", 1995 IEEE MTT-S Digest, pp. 1451-1454.
Yamauchi et al., "A Novel Series Diode Linearizer For Mobile Radio Power Amplifiers", 1996 IEEE MTT-S Digest, pp. 831-834.

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