Microwave plasma source

Details Microwave plasma source Microwave plasma source

1991-06-03

1993-07-27

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429816, C23C 1434

Patent

active

052307840

ABSTRACT:
A microwave plasma source includes: a microwave source; a rectangular waveguide having the microwave source at one end thereof; a coaxial waveguide arranged so as to penetrate through the other end of the rectangular waveguide and having an outer conductor and an inner conductor both having a door-knob-shaped portion at one end thereof and an opening at the end thereof; a target holder, for holding a target through an electrically insulating member, and arranged at the end of the inner conductor near the opening thereof; a magnet arranged at the end of the inner conductor near the opening thereof; and a vacuum chamber connected to the openings of the ends of the inner and outer conductors and having a gas inlet and a gas outlet. A microwave field generated by from the microwave source is propagated to the target through a space formed between the inner and outer conductors of the coaxial waveguide and is radiated on the target, so that an electrical discharge is caused in the vacuum chamber in which gas is introduced from the gas inlet, and a plasma is generated on the target.

REFERENCES:
patent: 4721553 (1988-01-01), Saito et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5022977 (1991-06-01), Matsuoka et al.
patent: 5034086 (1991-07-01), Sato
"Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering", Toshiro Ono et al., Japanese Journal of Applied Physics, vol. 23, No. 8, Aug. 1984, pp. L534-536.
"Ohyo-butsuri", vol. 57, 1988, Shigetomi Matsuoka et al., pp. 1301-1313. (An English language translation of abstract is attched.).

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