Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1991-09-13
1993-08-10
Nguyen, Nam X.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429834, 20429837, 156345, 118723, C23C 1400
Patent
active
052345653
ABSTRACT:
A microwave plasma source includes: a microwave source for generating a microwave field; a rectangular cavity resonator have a glass container for passing the microwave field therethrough and for vacuum sealing; a vacuum chamber; a holder, and first and second circular permanent magnets. The coaxial tube is connected to the resonator, and has an outer conductor and an inner conductor having outer and inner door-knob-shaped portions at one ends thereof, respectively. The outer conductor has an opening at the end of the outer door-knob-shaped portion. The inner conductor is fitted into the resonator in parallel with a direction of an electric field in the resonator, and has a flat portion at the end of the inner door-knob-shaped portion. The container is fitted into the opening of the outer conductor so as to contact the inner conductor, and has an opening. The chamber is provided with an opening connected to with the opening of the container, a gas inlet port, and a gas exhaust port. The holder is arranged in the container while opposing the flat portion of the inner conductor, and holds a substance to be processed. The first circular permanent magnet is arranged at the flat portion of the inner conductor. The second circular permanent magnet is arranged at the holder so as to have a polarity opposite to that of the first permanent magnet.
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Review of Scientific Instruments, Yoshikazu Yoshida, vol. 62, No. 6, Jun. 1991, "Plasma Properties In the Open-Ended Region of a Coaxial-Type Microwave Cavity", pp. 1498-1503.
Matsushita Electric - Industrial Co., Ltd.
Nguyen Nam X.
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