Microwave plasma processing system

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118723MW, 118723E, 156345, 20429838, C23C 1600

Patent

active

055296327

ABSTRACT:
A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and an adhesion preventing member in which a cylinder disposed so as to be in contact with the inner face of a wall of the reaction chamber and a microwave reflecting plate having a gas discharge hole are integrally formed.
A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and a microwave reflecting plate which is attached to the inner face of a wall of the reaction chamber and which has a gas discharge hole.

REFERENCES:
patent: 4985109 (1991-01-01), Otsubo et al.
patent: 5173641 (1992-12-01), Imahashi et al.
patent: 5182495 (1993-01-01), Fukuda et al.
patent: 5364519 (1994-11-01), Fujimura et al.
patent: 5415719 (1995-05-01), Akimoto
patent: 5449411 (1995-09-01), Fukuda et al.

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