Microwave plasma processing system

Details Microwave plasma processing system Microwave plasma processing system

1995-06-13

1996-08-13

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MW, 118723E, 20429838, 156345, C23C 1600

Patent

active

055452582

ABSTRACT:
A microwave plasma processing system, wherein a conductor disposed for controlling the anisotropy and the acceleration energy of ions in a plasma has inside a flow path for reactant gasses and a plurality of holes through which the gasses are to be blown toward a sample holder.
A microwave plasma processing system, wherein the ratio of the total area of microwave transmission holes to the area of a conductor is set to be in a range of 0.25 to 0.65.
A microwave plasma processing system, wherein each microwave transmission hole formed in a conductor has a dimension in the microwave traveling direction greater than that in a direction perpendicular to the traveling direction.

REFERENCES:
patent: 5017404 (1991-05-01), Paquet et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5342472 (1994-08-01), Imahashi et al.
patent: 5364519 (1994-11-01), Fujimura et al.
patent: 5415719 (1995-05-01), Akimoto

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