Microwave plasma processing or semiconductor devices

Details Microwave plasma processing or semiconductor devices Microwave plasma processing or semiconductor devices

1991-03-11

1993-09-14

Paschall, Mark H.

Electric heating

Metal heating

By arc

21912142, 21912159, 156345, 156646, 20429837, B23K 900

Patent

active

052451577

ABSTRACT:
A plasma processing is performed using a plasma generation chamber into which is introduced a gas for generating plasma by a resonant effect between a microwave and a magnetic field. A processing chamber communicates with the plasma generation chamber and a single excitation solenoid disposed to surround the plasma generation chamber in a coaxial relationship therewith and movable relative to the plasma generation chamber. The processing includes generating plasma while controlling the magnitude of the electric current flowing through the single excitation solenoid to be in a range in which the density of the generated plasma is decreased with the increase of the current, and processing a specimen to be processed disposed within the processing chamber.

REFERENCES:
patent: 4952273 (1990-08-01), Popov
patent: 5016564 (1991-05-01), Nakamura et al.
patent: 5032202 (1991-07-01), Tsai et al.

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