Microwave plasma processing method for preventing the production

Details Microwave plasma processing method for preventing the production Microwave plasma processing method for preventing the production

1998-09-09

1999-12-21

Paschall, Mark

Electric heating

Metal heating

By arc

21912144, 1566461, 20429831, 20429837, B23K 1000, H01L 2100

Patent

active

060052171

ABSTRACT:
A microwave plasma processing method capable of processing an object layer having a minute configuration and a laminated object layer without producing any etch residue and of increasing the ratio of the etching selectivity of the object layer to those of a mask and an underlying layer when etching a laminated film. To achieve this, the intensity of a magnetic field created by solenoids surrounding a plasma processing chamber is varied to vary the distance between the object surface of a workpiece and a flat resonance region for etching an object layer and for overetching the object layer to vary the position of a plasma produced by the interaction of an electric field created by a microwave and the magnetic field created by the solenoids according to the layers being processed.

REFERENCES:
patent: 5213658 (1993-05-01), Ishida
patent: 5266154 (1993-11-01), Tatsumi

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