Microwave plasma processing method

Details Microwave plasma processing method Microwave plasma processing method

2007-01-30

2007-01-30

Van, Quang (Department: 3742)

Electric heating

Metal heating

By arc

C216S070000

Reexamination Certificate

active

10550509

ABSTRACT:
A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber1, and a processing gas is transformed into plasma to form a thin film layer on a base substance13disposed in the plasma processing chamber13, and the method comprises: fixing the base substance13coaxially with a central axis of the plasma processing chamber1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion131to a body portion133of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion132of the base substance.

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patent: 6582778 (2003-06-01), Namiki et al.
patent: 2002-153830 (2002-05-01), None
patent: 99/17334 (1999-04-01), None

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