Microwave plasma processing device

Details Microwave plasma processing device Microwave plasma processing device

1992-05-29

1994-03-01

Paschall, Mark H.

Electric heating

Metal heating

By arc

21912152, 21912148, 156345, 156646, 20429837, B23K 900

Patent

active

052909930

ABSTRACT:
A microwave plasma processing device is composed of a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced; a sample table disposed in the vacuum chamber to which an AC voltage is applied; a microwave generating apparatus which generates microwaves and introduces the microwaves towards a surface to be processed of a sample located on the sample table; a magnetic field generating apparatus for generating a magnetic field in the vacuum chamber; an insulator disposed on a part exposed to plasma produced in the vacuum chamber; and a ground electrode disposed at a place which is on a microwave introduction side with respect to the surface of the sample table on which the sample is placed. The ground electrode arranged in an insulator exposed to the plasma is protected by covering the surface of the ground electrode by an insulating film which is so thin that application of an AC voltage is not prevented. In this way the AC voltage is applied at a place where efficiency is high, and stable plasma processing can be effected.

REFERENCES:
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4985109 (1991-01-01), Otsubo et al.

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