Microwave plasma processing apparatus and microwave plasma proce

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723MA, 118723MR, 20429837, 20429838, 216 70, 438728, 427571, 427575, H05H 100

Patent

active

059850914

ABSTRACT:
A microwave plasma processing apparatus comprises a plasma generation chamber, a processing chamber communicating with the plasma generation chamber, supporting of a substrate to be processed arranged in the processing chamber, a circular waveguide with slots arranged around the plasma generation chamber, and a magnetic field generation unit for generating a cusp magnetic field in the plasma generation chamber. A microwave plasma processing method using this apparatus is provided, to maintain a high-density and large-area uniform plasma, even at a low temperature, and even in a low-pressure region having a pressure of 1 mTorr.

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patent: 5517085 (1996-05-01), Engemann et al.
patent: 5538699 (1996-07-01), Suzuki
patent: 5626679 (1997-05-01), Shimizu et al.

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