Microwave plasma processing apparatus

Details Microwave plasma processing apparatus Microwave plasma processing apparatus

1993-10-19

1995-09-12

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MR, 118723E, 118723MW, 118723ME, 118728, 156345, 134 1, C23C 1630, C23C 1650

Patent

active

054494117

ABSTRACT:
A microwave plasma processing apparatus is provided with a vacuum chamber, a substrate holder for mounting a substrate to be processed, a reactive gas feed port, a cleaning gas feed port, a plasma generation device for generating a processing plasma from the reactive gas and a cleaning plasma from the cleaning gas, and a high-frequency electric field application device for applying an electric field having a frequency that allows ions in the cleaning plasma to follow changes in the electric field. The high-frequency electric field application device is activated to apply the electric field to the cleaning plasma so as to remove substances that have been deposited on the surfaces of the vacuum chamber and substrate holder due to the processing of the substrate by the processing plasma, thereby cleaning up the vacuum chamber and substrate holder.

REFERENCES:
patent: 4816113 (1989-03-01), Yamazaki
patent: 4960071 (1990-10-01), Akahori et al.
patent: 5006192 (1991-04-01), Deguchi
Sugano, Applications of Plasma Processes to VLSI Technology, John Wiley and Sons, 1985, pp. 113, 154-155.

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